Third Dimension Triples Processor Speed Dec6 By Webmaster • Posted in Press Releases December 6, 2004 Naperville, IL – 6 December 2004 Tezzaron Semiconductor has demonstrated a new 8051-based microprocessor that is 2 to 10 times faster than typical 8051 designs, running at speeds of up to 140 MHz under lab conditions. The microprocessor’s secret is its three-dimensional architecture: the processor is on one layer and 128 … [Read More]
Tezzaron Launches RAM in a New Dimension Nov22 By Webmaster • Posted in Press Releases November 22, 2004 Naperville, IL – November 22, 2004 Tezzaron Semiconductor today announced the world’s first 3D-IC RAM chip. The re-programmable memory (RAM) device was built as a three-dimensional integrated circuit (3D IC) – two layers of circuitry with vertical interconnects that allow them to behave as a single device. This technology is expected … [Read More]
Techniques for Producing 3D ICs with High-Density Interconnect Oct31 By Webmaster • Posted in Documents October 31, 2004 A Tezzaron presentation from the 2004 VLSI Multi-Level Interconnection Conference (VMIC) Techniques for Producing 3D ICs with High-Density Interconnect
Tezzaron Wins $1M in Purchase Orders May10 By Webmaster • Posted in Press Releases May 10, 2004 Naperville, IL – 10 May, 2004 A new memory product from Tezzaron Semiconductor has generated over one million dollars in purchase orders. Tezzaron’s CTO, Bob Patti, says: “We’ve presented this product to only a handful of customers. The response has been tremendous!” The new 3T-iRAM™ memories promise higher reliability and lower … [Read More]
Tezzaron Announces Commercial 3D ICs Apr14 By Webmaster • Posted in Press Releases April 14, 2004 Naperville, IL – April 14, 2004 Tezzaron Semiconductor has announced commercially available products built with its FaStack™ 3D integration process. These fully integrated three-dimensional circuits (3D ICs) are available for general purchase; Tezzaron has already received purchase orders. Tezzaron plans to ship two types of commercial parts by the end of … [Read More]