Tezzaron Launches RAM in a New Dimension Nov22 By Webmaster • Posted in Press Releases November 22, 2004 Naperville, IL – November 22, 2004 Tezzaron Semiconductor today announced the world’s first 3D-IC RAM chip. The re-programmable memory (RAM) device was built as a three-dimensional integrated circuit (3D IC) – two layers of circuitry with vertical interconnects that allow them to behave as a single device. This technology is expected … [Read More]
Tezzaron Wins $1M in Purchase Orders May10 By Webmaster • Posted in Press Releases May 10, 2004 Naperville, IL – 10 May, 2004 A new memory product from Tezzaron Semiconductor has generated over one million dollars in purchase orders. Tezzaron’s CTO, Bob Patti, says: “We’ve presented this product to only a handful of customers. The response has been tremendous!” The new 3T-iRAM™ memories promise higher reliability and lower … [Read More]
Tezzaron Announces Commercial 3D ICs Apr14 By Webmaster • Posted in Press Releases April 14, 2004 Naperville, IL – April 14, 2004 Tezzaron Semiconductor has announced commercially available products built with its FaStack™ 3D integration process. These fully integrated three-dimensional circuits (3D ICs) are available for general purchase; Tezzaron has already received purchase orders. Tezzaron plans to ship two types of commercial parts by the end of … [Read More]
Tezzaron/Tachyon in the News: 2001-2003 Dec31 By Webmaster • Posted in Tezzaron in the News December 31, 2003 November 2003: Semiconductor Investment and the Future (Gilder Technology Report) (see “Consequences” near the bottom of page 3.) November 2003: New memory technology promises top speeds (Electronic Products) September 2003: Wafers Stack on Copper Super-Vias (SolidState Technology) August 2003: Tezzaron delivers challenge to SRAM, DRAM (EE Times) August … [Read More]
New Memory Technology is World’s Fastest Aug18 By Webmaster • Posted in Press Releases August 18, 2003 Naperville, IL – August 18, 2003 Tezzaron Semiconductor today announced a prototype memory device with record-breaking speed: 1.3 nanosecond (ns) latency, 1 ns cycle time, and a throughput of 2 Gigabits/sec on each pin. The underlying technology for this device is a patented 3-transistor cell that senses changes in electrical current … [Read More]