3D Integration: New Opportunities for Speed, Power and Performance Feb7 By Webmaster • Posted in Documents February 7, 2012 A Tezzaron presentation from the 3D-IC Summer School in Buenos Aires Download PDF: 3D Integration: New Opportunities for Speed, Power and Performance
Tezzaron in the News: 2011 Dec31 By Webmaster • Posted in Tezzaron in the News December 31, 2011 December 2011: Honeywell, Tezzaron Semi partner to develop 3D chips for military/aero applications (Smart Brief) December 2011: Rad-hard 3D integrated circuit design for aerospace and defense is goal of Honeywell-Tezzaron partnership (Military & Aerospace Electronics) December 2011: Honeywell taps Tezzaron Semiconductor to stack rad-hard die (ElectroIQ) December 2011: Honeywell … [Read More]
Bob Patti, Tezzaron Semiconductor, at the RTI 3D Architectures for Semiconductor Integration and Packaging 2011 Dec20 By Webmaster • Posted in Tezzaron in the News December 20, 2011 Bob Patti, CTO, Tezzaron Semiconductor, talks about the challenges and opportunities 3D integration brings to the semiconductor manufacturing industry, and Tezzaron’s role in bringing 3D IC integration to market… watch video
Honeywell and Tezzaron to Build Rad Hard 3D-ICs Dec9 By Webmaster • Posted in Press Releases December 9, 2011 NAPERVILLE, Illinois – December 9, 2011 Honeywell Microelectronics and Tezzaron Semiconductor are working together to produce a new range of radiation-hardened (rad hard) integrated circuits. Honeywell’s sturdy, well-qualified S150 process will use Tezzaron’s 3D stacking to greatly increase circuit density without migrating to a smaller node. The resulting three-dimensional integrated circuits … [Read More]
A*STAR Institute of Microelectronics and Tezzaron Team Up To Develop 2.5D/3D Through-Silicon Interposer Technology Dec6 By Webmaster • Posted in Press Releases December 6, 2011 NAPERVILLE, Illinois – December 6, 2011 The A*STAR Institute of Microelectronics (IME) and Tezzaron Semiconductor, a leader in 3D-ICs, have today announced a research collaboration agreement to develop and exploit advanced Through Silicon Interposer (TSI) technology. The two organizations will improve and refine the design and manufacture of silicon interposers and … [Read More]