Semiconductor Engineering Peers into the Future and Sees Tezzaron May13 By David Chapman • Posted in Industry News Opinion Tezzaron in the News May 13, 2020 When Bryon Moyer of Semiconductor Engineering decided to try and figure out the future of DRAM, everywhere he went he heard essentially the same story, (paraphrasing) “…we have not come up with any technology that beats it, so we will keep doing what we have always done…”, that … [Read More]
Is 7nm the Last Major Node? Jul27 By Webmaster • Posted in Opinion July 27, 2017 The title of this post is stolen from an article by Ed Sperling, published in Semiconductor Engineering, July 20, 2017. I reference it here to cite it as recommended reading. The list of problems with semiconductor processes beyond 10nm seem overwhelming. New nodes have always looked difficult to achieve, but I … [Read More]
Tezzaron’s Response to Intel’s Tri-Gate “3D” Transistor May29 By Webmaster • Posted in Opinion May 29, 2011 Intel’s new transistor is an impressive piece of technology – even more so because it is built in an extremely advanced 22nm process. However, calling this transistor “3D” has caused some understandable confusion between these transistors and our 3D-ICs (or 3D chips). Transistors are to a chip what bricks are to … [Read More]