DiRAM4™ 3D Memory

Our flagship product is DiRAM4™, the 4th generation in a series of dis-integrated high performance memory subsystems.

DiRAM4™ is a whole family of off-the-shelf and custom products, all sharing the same bit layers and controller layers. Customization is available via build-to-suit I/O layers.

Family NamePortsBanks
per
Port
InterfaceDensityData
Bandwidth
Latency
DiRAM4-64C64™64640.6 – 1.3V
CMOS I/O
64 Gb8 Tb/s9 ns
DiRAM4-64C32™64640.6 – 1.3V
CMOS I/O
32 Gb8 Tb/s9 ns
DiRAM4-64C16™64640.6 – 1.3V
CMOS I/O
16 Gb8 Tb/s9 ns

All DiRAM4 products incorporate Bi-STAR® test and repair technology for extraordinary reliability.

DiRAM4™ products are offered in multiple density configurations: 64Gigabit (8GigaByte), 32Gb (4GB), and 16Gb (2GB). Reducing density does not reduce performance.

We plan to source DiRAM4™ with I/O layers that allow SerDes, Pico-SerDes (Ultra Short Reach SerDes), and even Optical I/O – but the popular I/O option, the first one going into production, is a very wide low voltage CMOS I/O interface. Designated DiRAM4-64Cxx, each CMOS I/O device has 64 ports, each port having a separate I/O 32 bit data bus that can be operated in either Burst-of-2 or Burst-of-8 mode. Each port is completely independent, with its own clock, control, and address inputs as well as 32 data in and 32 data out connections. The HSTL-like interface is extremely flexible and can be powered with a nominal VDDQ anywhere from 0.6V to 1.3V. The input buffer trip point is controlled by VREF, normally set to VDDQ/2.


More information is available under NDA. Contact us to learn more: info@tezzaron.com